1n 5712 small signal schottky diode description metal to silicon junction diode featuring high break- down voltage, low turn-on voltage and ultrafast switching. primarly intended for high level uhf/vhf detection and pulse application with broad dynamic range. november 94 do 35 (glass) symbol parameter value unit v rrm repetitive peak reverse voltage 20 v i f forward continuous current* t a = 25 c 35 ma p tot power dissipation* t a = 25 c 430 mw t stg t j storage and junction temperature range - 65 to 200 c t l maximum lead temperature for soldering during 10s at 4mm from case 230 c absolute ratings (limiting values) symbol test conditions value unit r th(j-a) junction-ambient* 400 c/w thermal resistance * on infinite heatsink with 4mm lead length ** pulse test: t p 300 m s d < 2% . matched batches available on request. test conditions (forward voltage and/or capacitance) according to customer specification. symbol test conditions min. typ. max. unit v br t amb = 25 ci r = 10 m a 20 v v f * * t amb = 25 ci f = 1ma 0.41 v t amb = 25 ci f = 35ma 1 i r * * t amb = 25 cv r = 15v 0.1 m a static characteristics electrical characteristics symbol test conditions min. typ. max. unit c t amb = 25 cv r = 0v f = 1mhz 1.2 pf t t amb = 25 ci f = 5ma krakauer method 100 ps dynamic characteristics 1/4
2/4 figure 1. forward current versus forward voltage at different temperatures (typical values). figure 2. forward current versus forward voltage (typical values). figure 3. reverse current versus ambient temperature. figure 4. reverse current versus continuous reverse voltage (typical values). 1n 5712
figure 5. capacitance c versus reverse applied voltage v r (typical values). 3/4 1n 5712
package mechanical data do 35 glass note 2 ba b c note 1 note 1 d d o / o / o / e e ref. dimensions notes millimeters inches min. max. min. max. a 3.050 4.500 0.120 0.117 1 - the lead diameter ? d is not controlled over zone e 2 - the minimum axial lengh within which the device may be placed with its leads bent at right angles is 0.59"(15 mm) b 12.7 0.500 ? c 1.530 2.000 0.060 0.079 ? d 0.458 0.558 0.018 0.022 e 1.27 0.050 cooling method : by convection and conduction marking: clear, ring at cathode end. weight: 0.15g information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any inf ringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise u nder any patent or patent rights of sgs-thomson microelectronics. specifi cations ment ioned in this publication are subject to ch ange without notice. this publi cation supersedes and replaces all information previously supplied. sgs-thomson microelectronics products are not authorized for use as critical components in l ife support dev ices or systems without express written approval of sgs-thomson microelectronics. ? 1994 sgs-thomson microelectronics - printed in italy - all rights reserved. sgs-thomson microelectronics group of companies australia - brazil - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - united kingdom - u.s.a. 4/4 1n 5712
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